Bipolar transistors, essential components in a myriad of electronic devices, are highly susceptible to the adverse impacts of radiation. Ionising radiation introduces defects within the semiconductor ...

Diodes has expanded its series of automotive-compliant bipolar transistors with 12 NPN and PNP devices designed to achieve ultra-low V CE(sat). With a saturation voltage of just 17 mV at 1 A and ...

Press-Pack Insulated Gate Bipolar Transistors (IGBTs) represent a robust class of semiconductor devices optimised for high-power applications. Unlike conventional IGBT modules that utilise wire ...

Targeting the high power demands of high-end and professional audio applications, the MJL4281A (npn) and MJL4302A (pnp) audio bipolar transistors offer a sustained collector-to-emitter voltage of 350 ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

To extend its BiCOM biCMOS process into the next generation, Texas Instruments is tapping the benefits of complementary silicon-germanium (SiGe) bipolar transistors. TI has developed a third ...

A new family of automotive-rated NPN and PNP bipolar transistors bring low losses and high reliability to switching, regulation/conversion, and driving applications. Typical applications include ...

Reflected radiation can remotely sense the activity of transistors in action ...

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